2N5886G
TRANS NPN 80V 25A TO204Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5886G, an NPN bipolar junction transistor, offers robust performance with a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 25A. This device features a maximum power dissipation of 200W and a transition frequency of 4MHz, making it suitable for demanding power switching and amplification applications. The DC current gain (hFE) is specified at a minimum of 20 at 10A collector current and 4V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 4V at 6.25A base current and 25A collector current. The TO-204 (TO-3) package facilitates efficient thermal management, and the component is rated for operation across a wide temperature range of -65°C to 200°C. This transistor finds application in power supplies, industrial motor control, and high-power audio amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 200 W |
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