2N5885G
TRANS NPN 60V 25A TO204Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5885G is an NPN bipolar junction transistor designed for high-power switching and amplification applications. This device features a 60V collector-emitter breakdown voltage and can handle a continuous collector current of up to 25A. With a maximum power dissipation of 200W and a transition frequency of 4MHz, it is suitable for demanding power supply circuits, motor control, and audio amplification. The transistor exhibits a minimum DC current gain (hFE) of 20 at 10A and 4V. Its saturation voltage (Vce(sat)) is a maximum of 4V at 6.25A and 25A. The 2N5885G is provided in a TO-204 (TO-3) package for robust thermal management, with a through-hole mounting type. Operating temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 200 W |
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