2N5884G
TRANS PNP 80V 25A TO204Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, Part Number 2N5884G. This device offers a 80 V collector-emitter breakdown voltage and a continuous collector current capability of 25 A. With a maximum power dissipation of 200 W, it is designed for high-current applications. The 2N5884G features a transition frequency of 4 MHz and a minimum DC current gain (hFE) of 20 at 10 A collector current and 4 V collector-emitter voltage. The saturation voltage (Vce) is rated at a maximum of 4 V for a base current of 6.25 A driving a 25 A collector current. This transistor is housed in a TO-204 (TO-3) package, facilitating through-hole mounting. It operates over a temperature range of -65°C to 200°C. The 2N5884G is commonly utilized in power switching, voltage regulation, and audio amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 200 W |
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