2N5883G
TRANS PNP 60V 25A TO204Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2N5883G, offers robust performance with a 60V collector-emitter breakdown voltage and a maximum collector current of 25A. This device features a power dissipation of 200W and a transition frequency of 4MHz. It is specified with a minimum DC current gain (hFE) of 20 at 10A and 4V, and a Vce saturation of 4V at 6.25A and 25A. The 2N5883G is housed in a TO-204 (TO-3) package, suitable for through-hole mounting. Operating temperature ranges from -65°C to 200°C. This component is commonly utilized in power switching and amplification applications across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 200 W |
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