2N5830
TRANS NPN 100V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5830, an NPN bipolar junction transistor, offers a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 200mA. This device features a maximum power dissipation of 625mW and a saturation voltage (Vce(sat)) of 250mV at 5mA base current and 50mA collector current. The DC current gain (hFE) is a minimum of 80 at 10mA collector current and 5V collector-emitter voltage. Designed for through-hole mounting, it is housed in a TO-92-3 package. The operating temperature range is -55°C to 150°C. This component is suitable for applications in general-purpose amplification and switching circuits across various electronic equipment.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 625 mW |
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