2N5769
TRANS NPN 15V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5769 is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This device offers a collector-emitter breakdown voltage of 15V and a continuous collector current capability of up to 200mA. Its maximum power dissipation is rated at 350mW. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 10mA collector current and 350mV Vce. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV for 10mA base current and 100mA collector current. Typical applications for this component are found in general-purpose switching and amplification circuits across various industrial segments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 350mV |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 350 mW |
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