2N5682
TRANS NPN 120V 1A TO39Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5682 is a bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This NPN device features a 120V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 1W and a TO-39 metal can package (TO-205AD), it is suitable for through-hole mounting. The 2N5682 exhibits a minimum DC current gain (hFE) of 40 at 250mA collector current and 2V Vce. The saturation voltage (Vce(sat)) is specified at 1V maximum for 50mA base current and 500mA collector current. This component finds utility in industrial control systems and power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 1 W |
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