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2N5680

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2N5680

TRANS PNP 120V 1A TO39

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2N5680 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-39 package (TO-205AD), offers a collector-emitter breakdown voltage of 120V and a maximum continuous collector current of 1A. With a maximum power dissipation of 1W, it features a minimum DC current gain (hFE) of 40 at 250mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at 1V typical for 50mA base current and 500mA collector current. The collector cutoff current is a maximum of 10µA. This device is commonly found in industrial control, consumer electronics, and power supply regulation.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 250mA, 2V
Frequency - Transition-
Supplier Device PackageTO-39
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max1 W

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