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2N5679

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2N5679

TRANS PNP 100V 1A TO39

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi's 2N5679 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-39 metal can package (TO-205AD), offers a continuous collector current of 1 A and a collector-emitter breakdown voltage of 100 V. It features a maximum power dissipation of 1 W. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 250 mA and 2 V, and a saturation voltage (Vce(sat)) of 1 V at 50 mA and 500 mA. The collector cutoff current (Icbo) is specified at a maximum of 10 µA. This device is commonly utilized in industrial control systems and power supply circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 250mA, 2V
Frequency - Transition-
Supplier Device PackageTO-39
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W

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