2N5657G
TRANS NPN 350V 0.5A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5657G is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-126 package. This component offers a high collector-emitter breakdown voltage of 350V and a maximum collector current of 500mA. It features a transition frequency of 10MHz and a maximum power dissipation of 20W. The DC current gain (hFE) is a minimum of 30 at 100mA and 10V. This transistor is suitable for applications requiring high voltage switching and amplification, commonly found in power supplies, lighting control, and industrial automation. The operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 10V @ 100mA, 500mA |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 20 W |
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