2N5655G
TRANS NPN 250V 0.5A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5655G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage (Vce(max)) of 250 V and a continuous collector current (Ic(max)) of 500 mA. With a power dissipation capability of 20 W and a transition frequency (fT) of 10 MHz, it offers robust performance. The transistor exhibits a minimum DC current gain (hFE) of 30 at 100 mA and 10 mV. It is housed in a TO-126 (TO-225AA) package and supports through-hole mounting. Typical applications include power supply regulation, audio amplifiers, and general switching circuits in industrial and consumer electronics. The operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 10V @ 100mA, 500mA |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10mV |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 20 W |
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