2N5551ZL1
TRANS NPN 160V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5551ZL1 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage (Vce) of 160V and a continuous collector current (Ic) capability of up to 600mA. With a transition frequency (fT) of 300MHz and a maximum power dissipation of 625mW, it is suitable for use in various electronic circuits. The DC current gain (hFE) is a minimum of 80 at 10mA collector current and 5V Vce. The transistor is housed in a TO-92 (TO-226) through-hole package and is supplied in Tape & Box (TB) packaging. It operates across a wide temperature range of -55°C to 150°C. This device finds application in consumer electronics, industrial control, and communication systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 625 mW |
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