2N5551RLRMG
TRANS NPN 160V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi NPN bipolar transistor, part number 2N5551RLRMG, offers a 160V collector-emitter breakdown voltage and 600mA continuous collector current. This through-hole TO-92 (TO-226) packaged device features a transition frequency of 300MHz and a maximum power dissipation of 625mW. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10mA, 5V, and a Vce saturation of 200mV at 5mA, 50mA. The collector cutoff current (ICBO) is a maximum of 50nA. Operating temperature range is -55°C to 150°C. The 2N5551RLRMG is supplied in Tape & Box packaging and finds application in general purpose amplification and switching circuits across various industrial electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 625 mW |
Request a Quote
Clients Also Buy
BC547BTAR
TRANS NPN 45V 0.1A TO92-3
MJE200STU
TRANS NPN 25V 5A TO126-3
BD13716S
TRANS NPN 60V 1.5A TO126-3
