2N5551RLRAG
TRANS NPN 160V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi 2N5551RLRAG is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector emitter breakdown voltage of 160V and a continuous collector current capability of 600mA. Its transition frequency is rated at 300MHz, enabling operation in RF and high-speed signal processing circuits. The device offers a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V collector emitter voltage, with a saturation voltage (Vce(sat)) of 200mV at 5mA base current and 50mA collector current. Power dissipation is specified at 625mW. The 2N5551RLRAG is supplied in a TO-92 (TO-226) through-hole package, presented in tape and reel packaging. This transistor finds application in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 625 mW |
Request a Quote
Clients Also Buy
BC547BTAR
TRANS NPN 45V 0.1A TO92-3
MJE200STU
TRANS NPN 25V 5A TO126-3
PN2369A_D27Z
TRANS NPN 15V 0.2A TO92-3
