2N5551RL1G
TRANS NPN 160V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5551RL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a collector-emitter breakdown voltage of 160V and a continuous collector current capability of up to 600mA. It features a transition frequency of 300MHz and a maximum power dissipation of 625mW. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10mA/5V and a saturation voltage (Vce(sat)) of 200mV at 5mA/50mA. The device operates within a temperature range of -55°C to 150°C and is supplied on tape and reel. This transistor is commonly utilized in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 625 mW |
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