2N5551G
TRANS NPN 160V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N5551G is a general-purpose NPN bipolar junction transistor designed for a wide range of applications. This component offers a maximum collector-emitter breakdown voltage of 160V and a continuous collector current capability of 600mA. With a transition frequency of 300MHz and a maximum power dissipation of 625mW, it is suitable for switching and amplification tasks in consumer electronics, industrial controls, and automotive systems. The transistor exhibits a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V collector-emitter voltage, with a Vce(sat) of 200mV at 5mA base current and 50mA collector current. It features a low collector cutoff current (ICBO) of 50nA. The 2N5551G is provided in a TO-92 (TO-226) through-hole package, operating across an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 625 mW |
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