2N5551CBU
TRANS NPN 160V 0.6A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N5551CBU is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 160V and a continuous collector current capability of up to 600mA. With a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a transition frequency of 100MHz, it offers robust performance for various circuit designs. The transistor dissipates a maximum power of 625mW and operates within an ambient temperature range of -55°C to 150°C. The TO-92-3 package facilitates straightforward PCB mounting. The 2N5551CBU finds utility in consumer electronics, industrial controls, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 625 mW |
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