2N5550TF
TRANS NPN 140V 0.6A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N5550TF is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device boasts a 140 V collector-emitter breakdown voltage (Vceo) and a continuous collector current (Ic) capability of 600 mA. With a transition frequency (fT) of 300 MHz, it is suitable for RF circuits and high-speed switching. The 2N5550TF offers a minimum DC current gain (hFE) of 60 at 10 mA and 5 V. It dissipates a maximum power of 625 mW and operates within a temperature range of -55°C to 150°C. The TO-92-3 package with formed leads, supplied on tape and reel (TR), facilitates automated assembly in industries such as consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 625 mW |
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