2N5550RLRAG
TRANS NPN 140V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5550RLRAG is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 140V and a maximum continuous collector current of 600mA. With a transition frequency of 300MHz and a maximum power dissipation of 625mW, it is suitable for use in industrial control systems, consumer electronics, and telecommunications equipment. The device offers a minimum DC current gain (hFE) of 60 at 10mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 250mV at 5mA base current and 50mA collector current. The 2N5550RLRAG is provided in a TO-92 (TO-226) package, configured for through-hole mounting, and supplied on tape and reel (TR). It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 625 mW |
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