2N5550BU
TRANS NPN 140V 0.6A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number 2N5550BU. This component offers a 140V collector-emitter breakdown voltage and a 600mA maximum collector current. Featuring a transition frequency of 300MHz and a power dissipation of 625mW, it is suitable for applications requiring moderate switching speeds and power handling. The DC current gain (hFE) is a minimum of 60 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is typically 250mV at 5mA base current and 50mA collector current. The transistor is housed in a TO-92-3 (TO-226AA) package, designed for through-hole mounting. Typical applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 625 mW |
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