2N5550
TRANS NPN 140V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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This onsemi NPN Bipolar Junction Transistor (BJT), part number 2N5550, is designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage of 140V and a continuous collector current capability of 600mA. The transistor exhibits a DC current gain (hFE) of at least 60 at 10mA collector current and 5V collector-emitter voltage, with a transition frequency of 300MHz. Its maximum power dissipation is rated at 625mW. The 2N5550 is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. Typical applications include consumer electronics and industrial control systems. The device specifications include a Vce(sat) of 250mV at 5mA base current and 50mA collector current, and a collector cutoff current (ICBO) of 100nA. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 625 mW |
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