2N5401TF
TRANS PNP 150V 0.6A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5401TF is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 150V and a continuous collector current rating of 600mA. With a transition frequency of 400MHz and a power dissipation of 625mW, it is suitable for use in consumer electronics, industrial automation, and telecommunications equipment. The DC current gain (hFE) is a minimum of 60 at 10mA and 5V. The Vce(sat) is 500mV maximum at 5mA base current and 50mA collector current. This device is supplied in a TO-92-3 package, provided on tape and reel for automated assembly. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 625 mW |
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