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2N5401TA

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2N5401TA

TRANS PNP 150V 0.6A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi 2N5401TA is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 150 V and a maximum continuous collector current of 600 mA. With a transition frequency of 400 MHz and a power dissipation of 625 mW, it is suitable for use in industrial control systems, consumer electronics, and telecommunications equipment. The device exhibits a minimum DC current gain (hFE) of 60 at 10 mA and 5 V, with a Vce(sat) of 500 mV at 5 mA base current and 50 mA collector current. The TO-92-3 package is provided in Tape & Box (TB) packaging for automated assembly. Operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Frequency - Transition400MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max625 mW

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