2N5401RLRMG
TRANS PNP 150V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5401RLRMG is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92 (TO-226) package. This device features a maximum collector-emitter breakdown voltage of 150V and can handle a continuous collector current of up to 600mA. It exhibits a transition frequency of 300MHz and a maximum power dissipation of 625mW. The minimum DC current gain (hFE) is specified at 60 at 10mA collector current and 5V collector-emitter voltage. Collector cutoff current (ICBO) is a maximum of 50nA. Saturation voltage (Vce(sat)) is 500mV at 5mA base current and 50mA collector current. Operating temperature range is from -55°C to 150°C. This component is suitable for applications including general-purpose amplification and switching across various industrial and consumer electronics sectors. The part is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 625 mW |
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