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2N5401RLRM

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2N5401RLRM

TRANS PNP 150V 0.6A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi 2N5401RLRM is a PNP bipolar junction transistor (BJT) with a collector-emitter breakdown voltage of 150V. This through-hole component offers a maximum continuous collector current of 600mA and a transition frequency of 300MHz. It dissipates a maximum power of 625mW and features a DC current gain (hFE) of at least 60 at 10mA collector current and 5V collector-emitter voltage. The transistor is housed in a TO-92 (TO-226) package, supplied in Tape & Box (TB) packaging. This device finds application in general-purpose switching and amplification circuits across various industrial and commercial electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Frequency - Transition300MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max625 mW

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