2N5401RL1
TRANS PNP 150V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5401RL1 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 150V and a continuous collector current capability of 600mA. With a transition frequency of 300MHz, it offers efficient performance in various signal processing tasks. The transistor has a maximum power dissipation of 625mW and a DC current gain (hFE) of at least 60 at 10mA collector current and 5V collector-emitter voltage. The Vce(sat) is rated at a maximum of 500mV for a base current of 5mA and collector current of 50mA. Encased in a standard TO-92 (TO-226) package with formed leads for through-hole mounting, this component is supplied in a tape and reel configuration for automated assembly. It operates across a wide temperature range of -55°C to 150°C. Applications include consumer electronics, industrial control, and telecommunications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 625 mW |
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