2N5401NLBU
TRANS PNP 150V 0.6A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5401NLBU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 150V and a continuous collector current rating of 600mA. With a transition frequency (fT) of 400MHz and a maximum power dissipation of 625mW, it is suitable for use in telecommunications, industrial control systems, and consumer electronics. The transistor offers a minimum DC current gain (hFE) of 60 at 10mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500mV at 5mA base current and 50mA collector current. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, the 2N5401NLBU operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 625 mW |
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