2N5401G
TRANS PNP 150V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5401G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a maximum collector-emitter breakdown voltage of 150 V and a continuous collector current rating of 600 mA. It exhibits a transition frequency of 300 MHz and a maximum power dissipation of 625 mW. The transistor is housed in a standard TO-92 (TO-226) package, suitable for through-hole mounting. Key electrical parameters include a minimum DC current gain (hFE) of 60 at 10 mA and 5 V, and a Vce(sat) of 500 mV at 5 mA base current and 50 mA collector current. Typical industries utilizing this component include telecommunications, industrial control, and consumer electronics. The cut-off current (ICBO) is specified at a maximum of 50 nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 625 mW |
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