2N5401BU
BJT TO92 150V PNP 0.625W 150CManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N5401BU is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component offers a collector-emitter breakdown voltage of 150 V and a maximum collector current of 600 mA. It features a transition frequency of 400 MHz and a maximum power dissipation of 625 mW. The device operates within a junction temperature range of -55°C to 150°C, with a typical DC current gain (hFE) of 60 at 10 mA and 5 V. Applications include general-purpose amplification and switching in consumer electronics, industrial control systems, and telecommunications equipment. The 2N5401BU is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 625 mW |
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