2N5400G
TRANS PNP 120V 0.6A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5400G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 120V collector-emitter breakdown voltage and a maximum collector current of 600mA. Its transition frequency is rated at 400MHz, supporting high-frequency operation. With a power dissipation capability of 625mW, it is suitable for moderate power handling. The device is packaged in a standard TO-92 (TO-226) through-hole configuration, facilitating easy board mounting. Key parameters include a minimum DC current gain (hFE) of 40 at 10mA collector current and 5V emitter-collector voltage, and a saturation voltage (Vce(sat)) of 500mV at 5mA base current and 50mA collector current. Collector cutoff current (ICBO) is a maximum of 100nA. The operating temperature range is -55°C to 150°C. This transistor is commonly found in industrial control systems, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 625 mW |
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