2N5323
TRANS PNP 50V 2A TO5Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N5323 is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. Featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 2A, this device is rated for 10W of power dissipation. The transistor offers a minimum DC current gain (hFE) of 40 at 500mA collector current and 4V Vce. It exhibits a Vce(sat) of 1.2V at 50mA base current and 500mA collector current. Supplied in a TO-5 metal can package, the 2N5323 is suitable for through-hole mounting. This component finds application in various industrial and power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 10 W |
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