2N5307
TRANS NPN DARL 40V 1.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N5307 is an NPN Darlington bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage (Vce) of 40V and a continuous collector current (Ic) capability of up to 1.2A. With a guaranteed minimum DC current gain (hFE) of 2000 at 2mA and 5V, it excels in low-current drive scenarios. The transistor features a low saturation voltage (Vce(sat)) of 1.4V at 200µA base current and 200mA collector current, minimizing power dissipation. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, it is suitable for mounting on PCBs and is rated for a maximum power dissipation of 625mW. The 2N5307 is commonly utilized in consumer electronics, industrial controls, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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