2N5306
TRANS NPN DARL 25V 1.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5306 is an NPN Darlington bipolar junction transistor (BJT) designed for applications requiring high current gain. This through-hole component, housed in a TO-92-3 package, features a maximum collector current (Ic) of 1.2A and a collector-emitter breakdown voltage (Vce(max)) of 25V. With a minimum DC current gain (hFE) of 7000 at 2mA and 5V, it is suitable for amplification and switching functions. The saturation voltage (Vce(sat)) is specified at 1.4V maximum for a base current of 200µA and collector current of 200mA. The device operates within an extended temperature range of -55°C to 150°C. This component finds utility in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 7000 @ 2mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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