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2N5226

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2N5226

TRANS PNP 25V 0.5A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi PNP Bipolar Junction Transistor (BJT) for general-purpose amplification and switching applications. This component, the 2N5226, features a 25V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 50MHz and a maximum power dissipation of 625mW, it is suitable for use in consumer electronics and industrial control systems. The device exhibits a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V collector-emitter voltage. It is supplied in a TO-92-3 package, facilitating through-hole mounting. The saturation voltage (Vce Sat) is a maximum of 800mV at 10mA base current and 100mA collector current.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic800mV @ 10mA, 100mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition50MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max625 mW

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