2N5210TFR
TRANS NPN 50V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5210TFR is a general-purpose NPN bipolar junction transistor designed for a variety of applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. It features a transition frequency of 30MHz and a power dissipation of 625mW. The DC current gain (hFE) is a minimum of 200 at 100µA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is rated at a maximum of 700mV at 1mA base current and 10mA collector current. The transistor is housed in a TO-92-3 package with formed leads, suitable for through-hole mounting. The operating temperature range is -55°C to 150°C. This device is commonly employed in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100µA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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