2N5210TF
TRANS NPN 50V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5210TF is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. It features a transition frequency of 30MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is specified at a minimum of 200 at 100µA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 700mV at 1mA base current and 10mA collector current. The 2N5210TF is packaged in a TO-92-3 (TO-226-3) through-hole package, supplied on tape and reel. Typical applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100µA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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