2N5194G
TRANS PNP 60V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5194G is a PNP bipolar junction transistor (BJT) designed for switching and amplification applications. This through-hole component, packaged in a TO-126 (TO-225AA) case, offers a Collector-Emitter Breakdown Voltage (Vceo) of 60V and a continuous Collector Current (Ic) of up to 4A. It dissipates a maximum power of 40W. The device exhibits a minimum DC Current Gain (hFE) of 25 at 1.5A and 2V, with a typical transition frequency (fT) of 2MHz. Key specifications include a Collector Cutoff Current (Icbo) of 1mA (max) and a Vce(sat) of 1.4V at 1A/4A. This transistor is suitable for use in power supply regulation and general-purpose amplification circuits across various industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1.5A, 2V |
| Frequency - Transition | 2MHz |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 40 W |
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