Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

2N5190

Banner
productimage

2N5190

TRANS NPN 40V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi 2N5190 is an NPN bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and a maximum continuous collector current of 4A. This device offers a power dissipation of 40W and a transition frequency of 2MHz, with a minimum DC current gain (hFE) of 25 at 1.5A collector current and 2V Vce. The saturation voltage (Vce Sat) is rated at 1.4V maximum at 1A base current and 4A collector current. Designed for through-hole mounting, it is supplied in a TO-126 package. This component is suitable for applications in industrial and consumer electronics requiring robust power amplification and switching capabilities.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.4V @ 1A, 4A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1.5A, 2V
Frequency - Transition2MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max40 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MJE200STU

TRANS NPN 25V 5A TO126-3

product image
MMBT2907-D87Z

TRANS PNP 40V 0.8A SOT23-3

product image
SMMBTA42LT3G

TRANS NPN 300V 0.5A SOT23-3