2N5089TF
TRANS NPN 25V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi 2N5089TF is a high-gain NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device offers a collector-emitter breakdown voltage of 25V and a continuous collector current capability of 100mA. With a transition frequency of 50MHz and a minimum DC current gain (hFE) of 400 at 100µA collector current and 5V collector-emitter voltage, it is suitable for low-frequency amplifier circuits. The maximum power dissipation is 625mW. Packaged in a TO-92-3 (TO-226AA) through-hole configuration, supplied on tape and reel, the 2N5089TF is commonly employed in consumer electronics and industrial control systems. It features a low collector cutoff current of 50nA (ICBO) and a saturation voltage of 500mV at 1mA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100µA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
Request a Quote
Clients Also Buy
BC547BTAR
TRANS NPN 45V 0.1A TO92-3
MJE200STU
TRANS NPN 25V 5A TO126-3
PN2369A_D27Z
TRANS NPN 15V 0.2A TO92-3
