2N5089TA
TRANS NPN 25V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5089TA is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 25V and a maximum collector current of 100mA. With a transition frequency of 50MHz and a DC current gain (hFE) of at least 400 at 100µA collector current and 5V collector-emitter voltage, it provides robust amplification characteristics. The device dissipates a maximum power of 625 mW and features a low collector cutoff current of 50nA. It is supplied in a TO-92-3 package, suitable for through-hole mounting, and is delivered in Tape & Box packaging. This transistor is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100µA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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