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2N5089RLRA

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2N5089RLRA

TRANS NPN 25V 0.05A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi 2N5089RLRA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 25V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a transition frequency of 50MHz and a power dissipation of 625mW, it is suitable for use in audio amplifiers and low-power switching circuits. The device exhibits a minimum DC current gain (hFE) of 400 at 100µA collector current and 5V collector-emitter voltage. Saturation voltage is specified at a maximum of 500mV at 1mA base current and 10mA collector current. Encased in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting, the 2N5089RLRA is supplied in a Tape & Reel (TR) configuration. It operates across an extended temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 100µA, 5V
Frequency - Transition50MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max625 mW

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