2N5089G
TRANS NPN 25V 0.05A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2N5089G is a high-gain NPN bipolar junction transistor. This component features a 25V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a transition frequency of 50MHz, it is suitable for amplification and switching applications. The DC current gain (hFE) is a minimum of 400 at 100µA collector current and 5V Vce. Power dissipation is rated at 625mW. The 2N5089G is housed in a TO-92 (TO-226) package and is supplied in bulk packaging. This transistor is commonly utilized in industrial and consumer electronics, particularly in signal amplification circuits. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100µA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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