2N5089BU
TRANS NPN 25V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5089BU is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a 25V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 50MHz and a power dissipation of 625mW, it offers robust performance for a variety of electronic circuits. The DC current gain (hFE) is a minimum of 400 at 100µA collector current and 5V collector-emitter voltage, with a Vce saturation of 500mV at 1mA base current and 10mA collector current. It exhibits a low collector cutoff current of 50nA (ICBO). The 2N5089BU is housed in a TO-92-3 through-hole package, suitable for mounting on printed circuit boards. Operating temperature ranges from -55°C to 150°C. This component finds application in consumer electronics, industrial control systems, and audio amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100µA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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