2N5088TAR
TRANS NPN 30V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5088TAR is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92-3 package, offers a 30V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a high DC current gain (hFE) of 300 minimum at 100µA collector current and 5V Vce, with a transition frequency of 50MHz. The device dissipates a maximum power of 625mW and operates within a temperature range of -55°C to 150°C. Key specifications include a Vce saturation of 500mV maximum at 1mA base current and 10mA collector current, and a collector cutoff current (ICBO) of 50nA maximum. This component is commonly found in consumer electronics and industrial control systems. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100µA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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