2N5088RLRA
TRANS NPN 30V 0.05A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5088RLRA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 50mA. It offers a high DC current gain (hFE) of 300 minimum at 100µA collector current and 5V collector-emitter voltage, with a transition frequency of 50MHz. The device has a maximum power dissipation of 625mW and a collector-emitter saturation voltage of 500mV at 1mA base current and 10mA collector current. Encased in a TO-92 (TO-226) package with formed leads for through-hole mounting, the 2N5088RLRA operates over a temperature range of -55°C to 150°C. This transistor is commonly utilized in consumer electronics, industrial control systems, and communication equipment. The part number is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100µA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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