2N5088G
TRANS NPN 30V 0.05A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5088G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 30V and a continuous collector current capability of 50mA. It exhibits a minimum DC current gain (hFE) of 300 at 100µA collector current and 5V collector-emitter voltage, with a transition frequency of 50MHz. The device has a maximum power dissipation of 625mW and a saturation voltage (Vce(sat)) of 500mV at 1mA base current and 10mA collector current. The 2N5088G is supplied in a TO-92 (TO-226) through-hole package, facilitating ease of mounting on printed circuit boards. Operating temperature ranges from -55°C to 150°C. This transistor is suitable for use in various industrial and consumer electronics, including audio amplification circuits and low-power switching systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100µA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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