2N5087TFR
TRANS PNP 50V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2N5087TFR is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA, this device offers a transition frequency of 40MHz. Its DC current gain (hFE) is a minimum of 250 at 100µA and 5V. The 2N5087TFR is packaged in a TO-92-3 (TO-226-3) through-hole configuration with formed leads, supplied on tape and reel. With a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C, it is suitable for use in industrial and consumer electronics. The saturation voltage (Vce(sat)) is a maximum of 300mV at 1mA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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