2N5087TA
TRANS PNP 50V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5087TA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 50V and a maximum continuous collector current (Ic) of 100mA. The DC current gain (hFE) is specified at a minimum of 250 for an Ic of 100µA at 5V. With a transition frequency (fT) of 40MHz and a power dissipation of 625mW, the 2N5087TA is suitable for use in consumer electronics, industrial controls, and telecommunications equipment. It is supplied in a TO-92-3 package, with leads formed for through-hole mounting, and is available in Tape & Box packaging. The transistor exhibits a Vce(sat) of 300mV at an Ic of 10mA driven by an Ib of 1mA. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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