2N5087G
TRANS PNP 50V 0.05A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2N5087G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 50V and a maximum continuous collector current (Ic) of 50mA. The transition frequency (fT) is 40MHz, indicating suitability for moderate frequency operation. With a maximum power dissipation of 625mW and a DC current gain (hFE) of at least 250 at 100µA collector current and 5V Vce, the 2N5087G offers robust performance. The saturation voltage (Vce(sat)) is a maximum of 300mV at 1mA base current and 10mA collector current. This component is housed in a TO-92 (TO-226) package, facilitating through-hole mounting. It is commonly utilized in consumer electronics, industrial controls, and communication systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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