2N5087BU
TRANS PNP 50V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number 2N5087BU. This TO-92-3 packaged device offers a 50V collector-emitter breakdown voltage and a continuous collector current of up to 100mA. Key specifications include a transition frequency of 40MHz, a maximum power dissipation of 625mW, and a low collector cutoff current of 50nA. The DC current gain (hFE) is a minimum of 250 at 100µA collector current and 5V collector-emitter voltage. Saturation voltage at 1mA base current and 10mA collector current is 300mV maximum. This component is suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. It finds application in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 625 mW |
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